ZnO nanowire arrays with and without cavity tops

We report a new bubble-assisted growing and etching method for constructing ZnO nanowire (NW) arrays with cavity tops. Firstly, a ZnO NW array structure was formed on a ZnO-seed-layer-patterned Si substrate by combining e-beam lithography and a wet chemical method. Secondly, a new kind of ZnO NW array with cavity tops could be formed by a subsequent bubble-assisted growing and etching. These ZnO NW array structures with different morphologies exhibited different photoluminescence properties, showing their potential applications in lasing cavities, stimulated emitters, nanogenerator, photocatalysis and light-emitting diodes. The bubble-assisted etching method will open a new door for morphology design of ZnO and other semiconductor nanowire arrays at special sites.

► ZnO NW array structure was formed on a ZnO-seed-layer-patterned Si substrate.
► Both e-beam lithography and a wet chemical method were employed.
► A bubble-assisted method was used for constructing ZnO nanowire arrays with cavity tops.
► ZnO NW array structures with different morphologies exhibited different photoluminescence properties.