کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1527533 1511860 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thermal annealing effect on Y2O3:Eu3+ phosphor films prepared by yttrium 2-methoxyethoxide sol–gel precursor
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Thermal annealing effect on Y2O3:Eu3+ phosphor films prepared by yttrium 2-methoxyethoxide sol–gel precursor
چکیده انگلیسی

In this work, we demonstrate that yttrium 2-methoxyethoxide is a convenient sol–gel precursor to synthesize the Y2O3:Eu3+ phosphor films. The crystallization of Y2O3:Eu3+ phosphor films prepared from the yttrium 2-methoxyethoxide occurs at about 550 °C. We have also observed that our Y2O3:Eu3+ phosphor films undergo crystal structure change above annealing temperature of 750 °C which is not previously observed in the sol–gel fabrication method. The change of photoluminescent (PL) spectra is related to the evolution of Y2O3 crystal structure. It is shown in this investigation that the post-annealing treatment will help to produce phosphor films of improved brightness. The reasons assigned are the effective elimination of OH impurities and the grain growth of phosphor films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 100, Issues 2–3, 10 December 2006, Pages 329–332
نویسندگان
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