کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1530621 | 1511996 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD](/preview/png/1530621.png)
چکیده انگلیسی
In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρc ∼ 10 mΩ cm2) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 159–160, 15 March 2009, Pages 23–26
Journal: Materials Science and Engineering: B - Volumes 159–160, 15 March 2009, Pages 23–26
نویسندگان
D. Muñoz, C. Voz, S. Blanque, D. Ibarz, J. Bertomeu, R. Alcubilla,