کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1530850 1512004 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Advantage of the structure and the electrical properties of epitaxial ultra-thin zirconia gate dielectrics
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Advantage of the structure and the electrical properties of epitaxial ultra-thin zirconia gate dielectrics
چکیده انگلیسی

For this study, the authors fabricated non-doped 0 0 1 epitaxial ZrO2 gate dielectrics with small density of extrinsic defects and charges in the size effect. Wide-angle X-ray reciprocal space mapping and high-resolution transmission electron microscope (HRTEM) analyses showed many 90° and 180° domains. The 0 0 1 planes nearly align in the out-of-plane direction for 17-nm ZrO2 thin films. On the other hand, the nanoscale monoclinic phase precipitated coherently in a tetragonal matrix for 3-nm ZrO2 thin films. Capacitance–voltage (C–V) measurements suggest that the C–V curve of ZrO2 thin film has a charge-injection type hysteresis. The width is 26 mV for the 17-nm ZrO2 thin film and less than 2 mV for the 3-nm ZrO2 ultra-thin film.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 148, Issues 1–3, 25 February 2008, Pages 30–34
نویسندگان
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