کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531805 1512017 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impurity interaction with point defects in the Si–SiO2 structures and its influence on the interface properties
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Impurity interaction with point defects in the Si–SiO2 structures and its influence on the interface properties
چکیده انگلیسی

The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time, impurity content. The interaction between point defects with extended defects and impurities affect the SiO2 structure and Si–SiO2 interface properties. Hydrogen content in the oxidation ambient plays an important role in the density of point defects at the interface. The influence of point defects and impurities may be diminished and the interface properties improved by an appropriate choice of oxidation conditions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 134, Issues 2–3, 15 October 2006, Pages 222–226
نویسندگان
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