کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1531806 1512017 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion
چکیده انگلیسی

Vacancies and self-interstitials in silicon are involved, in a straightforward way, in the formation of grown-in microdefects, diffusion of metals (Au, Zn), self-diffusion and installation of vacancy depth profiles in thin quenched wafers. The diffusivities and equilibrium concentrations of the intrinsic point defects, in dependence of temperature, could be deduced by analyzing these phenomena. The defect diffusivities are high while the equilibrium concentrations are remarkably low.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 134, Issues 2–3, 15 October 2006, Pages 227–232
نویسندگان
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