Interface properties and passivation of p-Si(1 1 1) surfaces by electrochemical organic layer deposition

The grafting of nitrobenzene and bromobenzene onto H-terminated p-Si(1 1 1) surfaces in the presence of HF in the aqueous diazonium salt containing solution was investigated by in situ photoluminescence (PL) and ex situ infrared ellipsometric spectroscopy (IR-SE). The PL measurements revealed that the grafting process is faster for nitrobenzene and that the Si-phenyl interface is well passivated. Aging experiments in ambient air showed that the organic layers on Si have a better stability against oxidation and therefore, against defect formation than the H-terminated Si(1 1 1) surface.