کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1532472 996156 2011 32 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Threshold voltage shifting for memory and tuning in printed transistor circuits
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Threshold voltage shifting for memory and tuning in printed transistor circuits
چکیده انگلیسی
Multiple mechanisms for controllably shifting the threshold voltage of printed and organic transistors have been identified during the last few years, including some just in the past year, that are analogous in some ways to silicon floating gate memory elements. In addition, printed electronic memory is emerging as a serious product technology for identification and banking cards and for responsive systems through the efforts of startup companies. Other circuit applications are also being identified. Memory and tuning are not as prominently discussed in the literature as simpler and more accessible topics such as display driving, charge carrier mobility, voltage reduction, and high-frequency response. This report summarizes the numerous approaches being considered for the definition and control of transistor threshold voltage in alternative electronic technologies, including the theoretical basis for the effects utilized. Higher and more reliable performance parameters and entirely new functionality are among the advantages to be highlighted.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: R: Reports - Volume 72, Issue 4, 22 May 2011, Pages 49-80
نویسندگان
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