کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1532495 | 1512161 | 2010 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication and electrical properties of graphene nanoribbons
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Graphene is a semimetal with a zero band gap, and therefore cannot be used for effective field-effect transistors (FETs) at room temperature. Theoretical study predicted an appreciable band gap opening with the formation of nanometer graphene nanoribbons (GNRs), providing opportunities for graphene based transistor application. In this paper, we review recent developments in fabrication and electrical property studies of GNRs. We first study the theoretic prediction of electrical structures in ideal graphene nanoribbons which is closely related to the edge configurations. Different experimental efforts to fabricate GNRs are introduced and the electrical transport behaviors of fabricated GNR device are described. We then investigate the effect of edge disorder and charge impurities on real device performance, in which Anderson localization and Coulomb blockade effect are discussed to explain the observed transport behaviors. Other approaches such as symmetry broken to induce band gap on bulk graphene are also described.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: R: Reports - Volume 70, Issues 3â6, 22 November 2010, Pages 341-353
Journal: Materials Science and Engineering: R: Reports - Volume 70, Issues 3â6, 22 November 2010, Pages 341-353
نویسندگان
Jingwei Bai, Yu Huang,