کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
153485 456529 2007 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The influence of inorganic oxidants and metal ions on semiconductor sensitized photodegradation of 4-fluorophenol
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
The influence of inorganic oxidants and metal ions on semiconductor sensitized photodegradation of 4-fluorophenol
چکیده انگلیسی

This paper mainly focuses on the influence of inorganic oxidants and metal ions on the TiO2, ZnO sensitized photodegradation of 4-fluorophenol (4-FP) by UV-A light. TiO2-P25 is more efficient than ZnO. Among the oxidants periodate ion was found to be more efficient than others in improving the degradation of 4-FP via formation of reactive radicals. The effect of oxidants on the degradation of 4-FP was found to be in the order of IO4− > BrO3− > S2O82− H2O2 > ClO3−. The effect of metal ions on degradation of 4-FP was found to be in the order of Mg2+ > Fe3+ > Fe2+ > Cu2+. The degradation of 4-FP follows pseudo-first order kinetics according to the Langmuir–Hinshelwood model. The photomineralisation has also been confirmed by COD, gas chromatography and fluoride ion measurements.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chemical Engineering Journal - Volume 128, Issue 1, 15 March 2007, Pages 51–57
نویسندگان
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