کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1536910 996576 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoionization of a charged exciton in a GaAs/GaAlAs corrugated quantum well
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Photoionization of a charged exciton in a GaAs/GaAlAs corrugated quantum well
چکیده انگلیسی

Binding energies of a charged exciton as a function of well width of a GaAs/GaAlAs corrugated quantum well are investigated. The calculations have been performed by the variational method based on a two parametric trial wave function within a single band effective mass approximation. We have also included the effect of nonparabolicity of the conduction band of GaAs. We study the spectral dependence of the charged exciton in a GaAs/GaAlAs corrugated quantum well as a function of well width. The photoionization cross section for the charged exciton placed at the center of the quantum well is computed as a function of normalized photon energy. The cross-section behavior as a function of incident energy is entirely different in the two cases of radiation being x-direction (along the growth direction) or z-direction. The interband emission energy as a function of well width is calculated and the dependence of the photoionization cross section on photon energy is carried out for the charged excitons. The resulting spectra are brought out for light polarized along and perpendicular to the growth direction. The results show that the charged exciton binding energy, interband emission energy and the photoionization cross section depend strongly on the well width. Our results are compared with the other existing literature available.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 284, Issue 20, 15 September 2011, Pages 4936–4940
نویسندگان
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