کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1539831 996646 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparison of the optical properties of undoped and Ga-doped ZnO thin films deposited using RF magnetron sputtering at room temperature
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Comparison of the optical properties of undoped and Ga-doped ZnO thin films deposited using RF magnetron sputtering at room temperature
چکیده انگلیسی

The optical properties of undoped zinc oxide (ZnO) thin films of various thicknesses were compared with those of Ga-doped (GZO) thin films. Transparent, high-quality undoped ZnO and GZO films were deposited successfully using radio-frequency (RF) sputtering at room temperature. The films were polycrystalline with a hexagonal structure and a strongly preferred orientation along the c-axis. The films had an average optical transmission >85% in the visible part of the electromagnetic spectrum. The undoped ZnO thin films were more transparent than the GZO thin films. In the photoluminescence (PL) spectrum, ZnO film has higher quality than GZO as a result of decrease in the green emission intensity.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 281, Issue 8, 15 April 2008, Pages 2120–2125
نویسندگان
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