کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1540555 | 996663 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 μm
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
A method for fabrication of long-wavelength narrow line-width InGaAs resonant cavity enhanced (RCE) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 μm has been developed. A full width at half maximum (FWHM) of 0.7 nm and a peak responsivity of 0.16 A/W at the resonance wavelength of 1.55 μm have been accomplished by using a thick InP layer as part of the resonant cavity. The effects of roughness and tilt of the InP layer surface, and its free carrier absorption, as well as the thickness deviation of the mirror pair on the resonance wavelength shift and the peak quantum efficiency of the RCE photodetectors are analyzed in detail, and approaches for minimizing them toward superior performance are suggested.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 281, Issue 6, 15 March 2008, Pages 1582-1587
Journal: Optics Communications - Volume 281, Issue 6, 15 March 2008, Pages 1582-1587
نویسندگان
R.W. Mao, C.S. Tsai, J.Z. Yu, Q.M. Wang,