کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1541087 | 996673 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Self-consistent model for ultrafast near-field microscopy and near-field luminescence microscopy modeling of semiconductor surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Self-consistent model for ultrafast near-field microscopy and near-field luminescence microscopy modeling of semiconductor surface Self-consistent model for ultrafast near-field microscopy and near-field luminescence microscopy modeling of semiconductor surface](/preview/png/1541087.png)
چکیده انگلیسی
The method of calculation of near-field images and near-field luminescence images of semiconductor surface with exciton cloud and nanostructure is proposed. The method is based on Green function technique in the frame of concept of local-filed. The main characteristic of the proposed approach is maximal usage analytical calculations. The evolution of near-filed images and near-field luminescence images of (the system) the exciton cloud near the nanostructure are analyzed. Developed approach is universal and could be able to description of experimental data on time-resolved near-field microscopy and time-resolved near-field luminescence.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics Communications - Volume 281, Issue 14, 15 July 2008, Pages 3932-3937
Journal: Optics Communications - Volume 281, Issue 14, 15 July 2008, Pages 3932-3937
نویسندگان
V.Z. Lozovski, V.O. Vasilenko,