کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1548451 997740 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation of Cu(In,Ga)Se2 thin film by sputtering from Cu(In,Ga)Se2 quaternary target
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Preparation of Cu(In,Ga)Se2 thin film by sputtering from Cu(In,Ga)Se2 quaternary target
چکیده انگلیسی

Cu(In,Ga)Se2 (CIGS) thin films were prepared by directly sputtering Cu(In,Ga)Se2 quaternary target consisting of Cu:In:Ga:Se=25:17.5:7.5:50 at%. The composition and structure of CIGS layers have been investigated after annealing at 550 °C under vacuum and a Se-containing atmosphere. The results show that recrystallization of the CIGS thin film occurs and a chalcopyrite structure with a preferred orientation in the (112) direction was obtained. The CIGS thin film annealed under vacuum exhibits a loss of a portion of Se, while the film annealed under Se-containing atmosphere reveals compensation of Se. Several solar cells with three different absorber thicknesses were fabricated using a soda lime glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Al grid stack structure. The highest conversion efficiency of 9.65% with an open circuit voltage of 452.42 mV, short circuit current density of 32.16 mA cm−2 and fill factor of 66.32% was obtained on a 0.755 cm2 cell area.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Progress in Natural Science: Materials International - Volume 23, Issue 2, April 2013, Pages 133–138
نویسندگان
, , , , , ,