کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1549750 1513106 2015 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Graphitic carbon/n-CdTe Schottky-type heterojunction solar cells prepared by electron-beam evaporation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
پیش نمایش صفحه اول مقاله
Graphitic carbon/n-CdTe Schottky-type heterojunction solar cells prepared by electron-beam evaporation
چکیده انگلیسی


• The effect of interface states on current transport at forward bias was observed.
• The graphitic carbon/n-CdTe Schottky-type heterojunctions are linearly graded junctions.
• The photo-induced charge carriers mainly recombine within the neutral region.

We report on the analysis of the electrical and photoelectrical properties of graphitic carbon/n-CdTe Schottky-type heterojunction solar cells, which have been prepared by the deposition of transparent graphitic carbon films of nanometer thickness onto freshly cleaved n-CdTe substrates by the electron-beam evaporation technique. The presence of the electrically-active interface states at the heterojunction interface was revealed from the analysis of the dominating current transport at forward and reverse bias and from the capacitance–voltage characteristics. The unoptimized graphitic carbon/n-CdTe Schottky-type heterojunctions possess a rectification ratio of RR = 1390 and produce a maximum short circuit current density of Jsc = 8.47 mA cm−2, an open-circuit voltage of Voc = 0.435 V and fill factor of FF = 0.37 under standard illumination conditions (100 mW cm−2 AM 1.5).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 112, February 2015, Pages 78–84
نویسندگان
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