Electrical and photoresponse properties of Al/p-CuFeO2/p-Si/Al MTCOS photodiode

• Sol gel spin method was used to fabricate Al/CuFeO2/p-Si/Al Schottky diode.
• The optical band gap of the CuFeO2 film was calculated to be 2.82 eV.
• The ideality factor and barrier height of the diode were obtained to be 1.67 ± 0.2 and 0.55 ± 0.01 eV, respectively.

A p-type transparent semiconductor, CuFeO2 was synthesized by sol gel method to fabricate metal/transparent conducting oxide–semiconductor (MTCOS) Schottky photodiode. The optical and electrical properties of the CuFeO2 film and Al/p-CuFeO2/p-Si/Al diode were studied. The optical band gap of the CuFeO2 film was calculated using optical data and was found to be 2.82 eV. The diode exhibits a photoconducting behavior with a high photosensitivity value of 1.31 × 103 under 100 mW/cm2. The ideality factor and barrier height of the diode were obtained to be 1.67 ± 0.2 and 0.55 ± 0.01 eV, respectively. The interface states have been used to explain the results obtained in this study. It is evaluated that MTCOS photodiode can be used for optoelectronics applications.