Photoelectrochemical performances of n-CdS1−xSex thin films prepared by spray pyrolysis technique

The CdS1−xSex (0.0 ⩽ x ⩽ 1.0) thin films of various compositions have been deposited onto the amorphous and FTO coated glass substrates using a spray pyrolysis technique. An electrode/electrolyte interface has been formed between an n-type CdS1−xSex (0.0 ⩽ x ⩽ 1.0) alloyed/mixed type semiconductor and a sulphide/polysulphide redox electrolyte and investigated through the current–voltage, capacitance–voltage and photovoltaic power output characteristics. The dependence of the dark current through the junction and the junction capacitance on the voltage across the junction have been examined and analysed. Upon illumination of the interface with a light of 20 mW/cm2, an open-circuit voltage of the order of 335 mV and a short-circuit current of 1.02 mA/cm2 have been developed (for x = 0.8), which results in energy conversion efficiency and fill factor 0.79% and 0.46% respectively. The magnitudes of the barrier heights at the interfaces have been determined. The significant electrochemical properties have been observed for a cell with electrode composition x = 0.8.