کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1560553 | 1513922 | 2014 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
“Positive” and “negative” edge dislocations simultaneously interacting with Σ11 GB during nanoindentation
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مکانیک محاسباتی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: “Positive” and “negative” edge dislocations simultaneously interacting with Σ11 GB during nanoindentation “Positive” and “negative” edge dislocations simultaneously interacting with Σ11 GB during nanoindentation](/preview/png/1560553.png)
چکیده انگلیسی
Quasicontinuum simulations of “positive” and “negative” dislocations simultaneously interacting with Σ11 symmetrical tilt grain boundary (GB) during nanoindentation reveal two distinctive dislocation/GB interactions depending on the indenter size h and demarcated by a potential independent critical indenter size h¯cr. When h is less than h¯cr, lattice dislocations are eliminated by a reflected dislocation from dislocation-GB interaction. Meanwhile, less grain boundary dislocations (GBDs) are emitted. However, when h is greater than h¯cr, the “positive” and “negative” dislocations nucleate separately and interact with GB dependently due to one interaction site absorbing GBDs nucleated from another interaction site. The resulted GB configuration shows a regularly-stepped shape. Studies of a free-standing dissociated dislocation dipole (DP) shows that, hcr, depending on potentials, is a critical distance between two extended dislocations of a DP, at which the DP transforms configuration between stacking fault overlapping and non-overlapping configuration. The full edge DP model based on continuum theory, which does not take the strong interactions between partial dislocations into account, fails to predict hcr.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Computational Materials Science - Volume 87, May 2014, Pages 150-159
Journal: Computational Materials Science - Volume 87, May 2014, Pages 150-159
نویسندگان
Wenshan Yu, Zhiqiang Wang,