کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1565033 | 1514188 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
XPS investigation of impurities containing boron films affected by energetic deuterium implantation and thermal desorption
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی هسته ای و مهندسی
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چکیده انگلیسی
Effect of impurities on existing states of boron, carbon and oxygen in boron films were investigated by XPS technique. Carbon mainly exists as BCB bond and BC bond in 70% B boron films, and BC bond and CC bond in 50% B boron films. The existing state of oxygen depends on impurities composition in 70% B and 50% B boron films. D+ implantation and thermal desorption result in the reconstruction of boron films, which mainly includes the elimination of B2O3, increasing of BO bond and decreasing of BB bond. Implanted D+ into boron films can be trapped by carbon and oxygen, and remits as D2O and CDx in TDS process. Comparing to carbon, oxygen can be trapped easily by BB bond and difficult to remit from boron films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Nuclear Materials - Volume 457, February 2015, Pages 118-123
Journal: Journal of Nuclear Materials - Volume 457, February 2015, Pages 118-123
نویسندگان
Dadong Shao, Jiaxing Li, Xiaoli Tan, Zhongshi Yang, Kenji Okuno, Yasuhisa Oya,