کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1565256 | 1514205 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dislocation bias factors in fcc copper derived from atomistic calculations
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی هسته ای و مهندسی
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چکیده انگلیسی
Atomistic calculations were employed in order to calculate the interaction energy of an edge dislocation with different point defects. The bias factor was calculated by applying a finite element method on the interaction energy landscapes obtained from the atomistic calculations. A comparison of the calculated bias factor with a model based on elasticity theory reveals around 30% discrepancy under conditions representative for electron irradiation at 600 °C. Possible reasons are discussed. The bias factor dependence on dislocation density and ambient temperature is presented and discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Nuclear Materials - Volume 441, Issues 1–3, October 2013, Pages 357–363
Journal: Journal of Nuclear Materials - Volume 441, Issues 1–3, October 2013, Pages 357–363
نویسندگان
Zhongwen Chang, Pär Olsson, Dmitry Terentyev, Nils Sandberg,