Photoelectrochemical study on semiconductor properties of oxide films on Alloy 600 in high temperature water with ZnO addition

► The oxide films on Alloy 600 are formed with 0 or 650 ppb ZnO addition. ► A compact oxide ZnyFexNi1−x−yCr2O4 has a band gap energy of 4.1-4.3 eV. ► The flat band potential moves to the negative potential with ZnO addition. ► The dephasing angle of photocurrent shifts at the n-p transition potential.