Reaction kinetics of radiation-induced defects in vitreous silica under ion beam irradiation

The production behavior of radiation-induced defects in vitreous silica was studied by an in-situ luminescence measurement technique under ion beam irradiation of He+. The luminescence intensity of oxygen deficiency centers (ODCs) at 460 nm was observed to vary with irradiation time reflecting the accumulation behavior of the ODCs. The luminescence intensity increased after the start of irradiation and then decreased at room temperature, while it increased rapidly to a constant value at higher temperatures. Some differences were observed due to different OH contents in silica. The observations were analyzed by considering the production mechanisms and kinetics of the radiation-induced defects.