کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1568751 | 999906 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radiation resistance of photodiodes based on indium monoselenides under γ-irradiation
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی هسته ای و مهندسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Radiation resistance of photodiodes based on indium monoselenides under γ-irradiation Radiation resistance of photodiodes based on indium monoselenides under γ-irradiation](/preview/png/1568751.png)
چکیده انگلیسی
The influence of γ-irradiation (E = 3 MeV) over a large dose range 0.14-140 kGy on the electrical and photoelectric parameters of p-n-InSe and intrinsic oxide-p-InSe photoconvertors has been investigated. The detected changes in current-voltage characteristics, photoresponse spectra, open-circuit voltage, and short-circuit current for the structures are explained by the formation of radiation-induced point defects. A comparison to silicon photodiodes irradiated at analogous conditions has been carried out. On the basis of the absence of essential changes of the characteristics of the homo- and hetero-junctions based on III-VI layered semiconductors even at the maximum irradiation doses these junctions are recommended as radiation-resistant photodetectors for operation under γ-irradiation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Nuclear Materials - Volume 385, Issue 2, 31 March 2009, Pages 489-494
Journal: Journal of Nuclear Materials - Volume 385, Issue 2, 31 March 2009, Pages 489-494
نویسندگان
Z.D. Kovalyuk, O.A. Politanska, V.G. Tkachenko, I.N. Maksymchuk, V.V. Dubinko, A.I. Savchuk,