کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1569453 | 1514255 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of interstitial impurity on behavior of helium-defect complexes in vanadium studied by THDS
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی هسته ای و مهندسی
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چکیده انگلیسی
The effects of helium on macroscopic mechanical properties in vanadium alloys have been studied rather extensively. However, the evolution processes of helium-defect complexes, especially during the early stage, is not clearly understood. This is mainly because of the complexity of helium behavior due to the large amount of interstitial impurities (C, N, O, etc.) in vanadium. THDS (thermal helium desorption spectrometry) was performed to examine the nature and behavior of helium-defect complexes. The observed desorption peaks were assumed to be concerned with vacancy type defects. In vanadium, most of vacancies are decorated by interstitial impurities, and implanted helium produces HenVnX-type defects (XÂ =Â C, N, O). The desorption peaks of 570Â K, 690Â K and 940Â K were assigned as HenOV, HenOV2 and HenOV4, respectively. The population of these peaks increased with oxygen concentration. On the other hand, some peaks which were independent of impurity concentration were deduced as impurity free defect clusters such as HenVn.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Nuclear Materials - Volumes 367â370, Part A, 1 August 2007, Pages 505-510
Journal: Journal of Nuclear Materials - Volumes 367â370, Part A, 1 August 2007, Pages 505-510
نویسندگان
N. Nita, K. Miyawaki, H. Matsui,