Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy

• Te inclusions are proved act as lower potential centers in CdZnTe single crystals.
• Potential barrier around Te inclusions is revealed to play an important role in affecting carrier transportation.
• Bias-dependent potential barrier heights around Te inclusions are calculated and its influence on electron transportation is proposed.

To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe radiation detectors, the perturbation of the electrical field in and around Te inclusions was studied in CdZnTe single crystals via Kelvin probe force microscopy (KPFM). Te inclusions were proved to act as lower potential centers with respect to surrounding CdZnTe matrix. Based on the KPFM results, the energy band diagram at the Te/CdZnTe interface was established, and the bias-dependent effects of Te inclusion on carrier transportation is discussed.