کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1589574 | 1002001 | 2010 | 5 صفحه PDF | دانلود رایگان |

The interfacial structures of HfO2 and HfAlO thin films on Si have been investigated using spatially resolved electron energy-loss spectroscopy. We have found that interfaces are not atomically sharp, and variation in the symmetry of the local atomic coordination lasts for a couple of monolayers for both the as-deposited HfO2 and the HfAlO samples. Annealing of the HfO2 film in the oxygen environment leads to the formation of a thick SiO2/SiOx stack layer in-between the original HfO2 and the Si substrate. As a comparison, the interfacial stability is significantly improved by Al incorporation into the HfO2 film (forming HfAlO), which effectively reduced/eliminated the interfacial silicon oxide formation during the oxygen annealing process. The mechanism of the high-k film/substrate stabilization by Al incorporation is discussed based on the experimental results.
Journal: Micron - Volume 41, Issue 1, January 2010, Pages 15–19