کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1596660 | 1002839 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical and optical activation studies of high dose Si-implanted Al0.18Ga0.82N
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
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چکیده انگلیسی
Both electrical and optical activation studies of Si-implanted Al0.18Ga0.82N have been made as a function of anneal time and anneal temperature to obtain maximum possible electrical activation efficiency. Silicon ions were implanted at 200 keV with doses of 5Ã1014 and 1Ã1015Â cmâ2, and the samples were annealed from 1100 to 1250Â âC for 5-25Â min with a 500Â Ã
 thick AlN cap in a nitrogen environment. The electrical activation efficiency and Hall mobility increase with anneal time and anneal temperature. Nearly 100 and 95% electrical activation efficiencies were obtained for Si-implanted Al0.18Ga0.82N with doses of 5Ã1014 and 1Ã1015 cmâ2 and annealing at 1250 and 1200 âC for 25 min, respectively. The photoluminescence measurements show an excellent implantation damage recovery after annealing at these optimum anneal conditions, showing a strong near band emission. These optical results correlate well with the electrical results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 139, Issue 6, August 2006, Pages 284-288
Journal: Solid State Communications - Volume 139, Issue 6, August 2006, Pages 284-288
نویسندگان
Mee-Yi Ryu, Y.K. Yeo, M.A. Marciniak, R.L. Hengehold,