کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1604488 | 1516010 | 2008 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: The behaviour of Ti-substrates during deposition of boron doped diamond The behaviour of Ti-substrates during deposition of boron doped diamond](/preview/png/1604488.png)
Boron doped diamond layers were deposited on titanium substrates by the hot-filament CVD (chemical vapour deposition) method. Thereby double sided diamond coatings on titanium substrates were carried out.Titanium is an interesting substrate material for the deposition of diamond as it enables a wide range of different applications (especially for electrochemical applications). However, titanium is an active hydride and carbide forming element and shows a strong interaction with the individual reaction gases during deposition. Therefore, it has a great influence on the nucleation and growth of diamond as well as on the layer adhesion.By standard metallographic preparations information about the formed intermediate layers, their composition and properties could be gained. Furthermore, the influence of the boron doping on the formation of these intermediate layers was determined.
Journal: International Journal of Refractory Metals and Hard Materials - Volume 26, Issue 5, September 2008, Pages 438–443