کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1605081 | 1516208 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Phonon properties and thermal conductivity of GaN nanofilm under prestress and surface/interface stress
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This work investigates the effects of surface/interface stress and prestress fields on phonon thermal conductivity of wurtzite-GaN nanofilms theoretically. The elasticity model is applied to describe the phonon dispersion relations of spatially confined GaN nanofilms. The acoustoelastic effects and surface/interface stress effects are accounted for in calculating the phonon properties and thermal conductivity. Theoretical results show that the prestress and surface/interface stress can alter significantly the phonon properties such as the phonon dispersion relations, resulting in modification of thermal conductivity in GaN nanofilms. In addition, the prestress and surface/interface stress can change the dependence of thermal conductivity on the geometrical size and temperature. These results can be useful in controlling the thermal conductivity based on the strain/stress engineering in GaN nanostructures-based electronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 685, 15 November 2016, Pages 619-625
Journal: Journal of Alloys and Compounds - Volume 685, 15 November 2016, Pages 619-625
نویسندگان
Linli Zhu, Haonan Luo,