Current-voltage hysteresis of the composite MoS2-MoOx≤3 nanobelts for data storage

• The composite MoS2/MoOx≤3 nanobelts were synthesized.
• The current-voltage hysteresis memory effects have been observed at room temperature.
• Mechanisms based on polar charges, space charges and Ag-induced filament are proposed.

The composite MoS2/MoOx≤3 nanobelts are synthesized by hydrothermal process at 500 K for 48 h. An asymmetric, Schottky-Omhic contacted MoS2/MoOx≤3 nanobelts can be served as a switching resistance memory devices if the applied sweep voltage is high. The data storage effects can be clearly obtained after performing a cycle sweep voltage. The data storage effects mediated by the magnitude voltage have presented an excellent retention characteristics after stress 500 cycles sweep voltage at high voltage scan rate of 40 V/s, and have been easily “read” by a small probing voltage of 0.5 V. The uncross I–V hysteresis well maintained after performing high voltage scan rate of 500 V/s illustrates that the data can be programmed and erased with a high speed. The uncross current-voltage (I–V) hysteresis phenomenon should be attributed to the polar charges at the two ends and the space charges in the buck of the composite MoS2/MoOx≤3 nanobelts. The excessive magnitude voltage has driven the Ag+ filament penetrating into the MoS2/MoOx≤3 nanobelts might be responsible for the I–V hysteresis transformation from uncross to cross.