Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics

Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 679, 15 September 2016, Pages 115-121

C.Y. Zheng, G. He, X.F. Chen, M. Liu, J.G. Lv, J. Gao, J.W. Zhang, D.Q. Xiao, P. Jin, S.S. Jiang, W.D. Li, Z.Q. Sun,