Substrate-dependent ferroelectric and dielectric properties of Mn doped Na0.5Bi0.5TiO3 thin films derived by chemical solution decomposition

Na0.5Bi0.5(Ti0.98Mn0.02)O3 (NBTMn) thin films have been fabricated on Pt/Si and LaNiO3 (LNO)/Si substrates. Compared with the NBTMn thin film deposited on Pt/Si substrate which shows poor P-E loops with a round shaped feature because of the high leakage current, the NBTMn thin film on LNO/Si substrate exhibits much improved P-E loops with a slim shaped feature and a remanent polarization of 10.2 μC/cm2.