Intrinsic threshold switching responses in AsTeSi thin film

The intrinsic threshold switching (TS) responses of AsTeSi thin film are investigated for the potential application as a selector device in memory array. The non-equilibrium population of carriers in shallow traps by non-uniform electric field distribution along the film leads to TS behavior, which determines the switching parameters such as transition speed, threshold/hold voltages, and delay time. Additionally, pulse responses of TS shows the intrinsic nature of fast-switchable chalcogenide material; on/off transition at a specific voltage can occur within 5 ns, impulse response shows an unavoidable finite delay time of up to 20 ns. These switching parameters will be the dominant factor of the memory operation in high-density 1 memory-1 TS selector array.