Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium

High temperature Hall effect measurements between 873 and 1073 K in CdTe single crystals, heavily doped by In or Ga at maximal Cd partial vapor pressure were performed. The free electron density results were compared with respective values, obtained by numerical simulation, with satisfactory agreement. The analysis of experimental free electron density values at high-temperature point defect equilibrium allowed performing thermodynamic calculations ascertaining the position of the doubly negatively charged Cd vacancy donor in the CdTe band gap, lying at ∼EC−0.8 eV.