Epitaxial growth of high In-content In0.41Ga0.59N/GaN heterostructure on (11-20) Al2O3 substrate

We elucidated the structural analysis and optical response of MBE grown InGaN/GaN heterostructure on a-plane sapphire substrate. A highly crystalline In-rich InGaN (41% In content) epitaxial film with smooth surface morphology is profoundly useful for device fabrication of nitride based solar cells.205