All ITO-based transparent resistive switching random access memory using oxygen doping method

• The resistive switching characteristics of the transparent ITO/O-doped ITO/ITO RRAM cells have investigated.
• All ITO-based RRAM cell is achieved using oxygen doping method.
• Good endurance and long retention time were observed.

Recently, transparent memory would be useful in invisible electronics. In this work, for the first time we present a feasibility of stable unipolar resistive switching (RS) characteristics with reset current of sub-micron ampere for the fully transparent ITO/oxygen-doped ITO/ITO memory capacitors, i.e., all ITO structures, produced by sputtering method, which shows a high optical transmittance of approximately 80% in the visible region as well as near ultra-violet region. In addition, in a RS test to evaluate a reliability for the proposed memory devices, we observed a stable endurance of >100 cycles and a retention time of >104 s at 85 °C, with a current ratio of ∼102 to ∼103. This result indicates that this transparent memory by engineering the amount of oxygen ions within the ITO films could be a milestone for future see-through electronic devices.

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