Indium oxide thin film prepared by low temperature atomic layer deposition using liquid precursors and ozone oxidant

• InOx thin films were deposited by ALD at extremely low deposition temperatures below 100 °C.
• InOx films exhibit relatively low electrical resistivity below 10−3 Ω cm at temperatures above 150 °C.
• Ozone stimulate the chemical reactions to yield dense indium oxide films at low temperatures.

Transparent conducting Indium oxide (InOx) thin films were deposited by atomic layer deposition at low deposition temperatures below 100 °C. For the comparative study with liquid precursors in low temperature thermal ALD, diethyl[1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]-Indium, [3-(dimethylamino-kN)propyl-kC]dimethyl-Indium, and triethyl indium (TEIn) were used as the In precursors. Ozone was used as the oxidant for all precursors. InOx films grown using the three precursors all exhibit relatively low electrical resistivity below 10−3 Ω cm at temperatures above 150 °C. Below 100 °C, the lowest resistivity (2 × 10−3 Ω cm) was observed in the films grown with TEIn. The electrical, structural and optical properties were systematically investigated as functions of the deposition temperature and precursors.

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