کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1608833 | 1516250 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Property modulation of NiO films grown by radio frequency magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Property modulation of NiO films grown by radio frequency magnetron sputtering Property modulation of NiO films grown by radio frequency magnetron sputtering](/preview/png/1608833.png)
چکیده انگلیسی
NiO films were grown on Si substrates by radio frequency magnetron sputtering. The films were analyzed by an X-ray diffractometer, scanning electron microscope, X-ray photoelectron spectroscopy and SCS-4200 semiconductor characterization system. Evolution of the growth mode, lattice strain, morphology, chemistry states and electrical properties were investigated systematically. The film deposition rates and properties are very sensitive to the oxygen partial pressure lower than 10%. It is crucial to decrease the oxygen partial pressure to 2% for (1Â 1Â 1) film growth and the films would transform from (1Â 1Â 1) to (1Â 0Â 0) as the oxygen partial pressure increases from 2% to 6%. The film lattice expands quadratically with the increase of oxygen partial pressure. Nickel vacancy concentration in (1Â 1Â 1) films is much higher than that in (1Â 0Â 0) films. All (1Â 0Â 0) films show good rectifying behavior with p-Si. The film growth modes and properties could be modulated flexibly by controlling the oxygen partial pressures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 643, 15 September 2015, Pages 167-173
Journal: Journal of Alloys and Compounds - Volume 643, 15 September 2015, Pages 167-173
نویسندگان
T.F. Chen, A.J. Wang, B.Y. Shang, Z.L. Wu, Y.L. Li, Y.S. Wang,