کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1609323 | 1516260 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal, magnetic and magnetocaloric properties of Fe80âxMxB10Zr9Cu1 (M = Ni, Ta; x = 0, 3, 5) amorphous alloys
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The thermal, magnetic and magnetocaloric properties of amorphous Fe80âxMxB10Zr9Cu1 (M = Ni or Ta; x = 0, 3, and 5) alloys were investigated. Both Ni and Ta additions reduce the crystallization temperature (Tx1). The Curie temperature (TC) can be increased or decreased by the addition of Ni or Ta, respectively. The saturation magnetization (MS) decreases from 126.5 Am2 kgâ1 (without Ni or Ta) to 83.5 or 29.4 Am2 kgâ1 for 5 at.% Ni or Ta addition, respectively. The maximum magnetic entropy change (âÎSM)max of the amorphous alloys shows a decline trend with increasing Ni or Ta content. Under an applied magnetic field change of 5 T, the (âÎSM)max for Fe80âxNixB10Zr9Cu1 with x = 0, 3, and 5 are 3.28, 3.13, and 3.04 J kgâ1 Kâ1, respectively, while the (âÎSM)max for Fe80âxTaxB10Zr9Cu1 with x = 3 and 5 are 2.84 and 2.03 J kgâ1 Kâ1, respectively. The values of refrigeration capacity (RC) for the experimental alloys are higher than those of Fe80âxGdxCr8B12 (x = 5 and 10) alloys. In particular, the RC for the Fe80âxNixB10Zr9Cu1 (x = 3 and 5) and Fe77Ta3B10Zr9Cu1 alloys are comparable to that of the well-known MCM crystalline Gd5Si2Ge2. With large RC, negligible hysteresis and good thermal stability, these alloys can be used as the high temperature magnetic refrigerants working in the temperature range of 330-410 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 633, 5 June 2015, Pages 188-193
Journal: Journal of Alloys and Compounds - Volume 633, 5 June 2015, Pages 188-193
نویسندگان
X.C. Zhong, H.C. Tian, S.S. Wang, Z.W. Liu, Z.G. Zheng, D.C. Zeng,