Characteristics of traps in AgIn5S8 single crystals

• Traps in AgIn5S8 single crystals are investigated by the use of TSC technique.
• The trap distribution of AgIn5S8 is determined to be in between ∼40 and ∼120 meV.
• The distribution of traps is found as Gaussian in shape with a maximum at ∼67 meV.

Characteristics of charge traps in AgIn5S8 single crystals are investigated by the use of Thermally Stimulated Current (TSC) technique. The TSC spectra of the unintentionally doped sample recorded at a constant heating rate from 80 K to 300 K reveals a single broad peak at ∼90 K. The shift of the TSC peak continuously due to post-illumination preheating process confirmed the continuous trap distribution, which is Gaussian in shape. The trap density distribution changes from ∼40 meV on the shallow side to ∼120 meV on the deep side with the appearance of a maximum at ∼72 meV.