Effect of oxygen partial pressure and temperature on NTC characteristics of Mn1.56Co0.96Ni0.48O4 thin films grown on SrTiO3 (1 0 0) by laser MBE

• Single (1 0 0)-oriented MCNO thin films were deposited on MgO substrate.
• NTC thin film was prepared through LMBE technique for the first time.
• The prepared thin films achieved epitaxial growth.
• The prepared thin films achieved epitaxial growth.

Single (1 0 0)-oriented Mn1.56Co0.96Ni0.48O4 thin films were achieved on SrTiO3 (1 0 0) substrate using laser molecular beam epitaxy technique. The effects of growth temperature and oxygen partial pressure on crystal quality and negative temperature coefficient characteristics were studied by XRD, RHEED, AFM, SEM, resistance–temperature measurements and impedance spectrum. The results showed that the growth direction (4 0 0) of epitaxial Mn1.56Co0.96Ni0.48O4 thin films was parallel to SrTiO3 (1 0 0) substrate and the best NTC characteristic with B value of about 3000 K was found in the Mn1.56Co0.96Ni0.48O4 thin films grown at 500 °C with Po2 = 5 × 10−3 Pa for 3 h. Such thin films are desirable for a wide range of practical applications in the NTC thermistors.