کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1610765 | 1516281 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
“Pesting”-like oxidation phenomenon of p-type filled skutterudite Ce0.9Fe3CoSb12
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Oxidation behavior of p-type filled skutterudite Ce0.9Fe3CoSb12 in air was investigated and the oxidation mechanism was discussed in this study. Ce0.9Fe3CoSb12 exhibits interesting “pesting”-like oxidation phenomenon around 800Â K. The bulk sample completely disintegrates into a crowd of plate-like particles under this temperature range after only 24Â h exposure in air. However, this abnormal oxidation phenomenon is not observed at temperature below 750Â K or above 850Â K. This result is consistent with the thermogravimetry and derivative thermogravimetry measurements which show that the oxidation rate for Ce0.9Fe3CoSb12 around 800Â K is the highest among 650-900Â K. Microstructure observations suggest that this “pesting”-like oxidation is related with the severe periodically oxide layer peeling-off behavior around 800Â K, which makes the Ce0.9Fe3CoSb12 samples are easy to be oxidized because the fresh substrate surface is always exposed to high concentration oxygen atmosphere. X-ray diffraction and X-ray photoelectron spectroscopy measurements indicated that in the oxide scale the direct contact of Fe3+-oxide and CoSb2O4 which possess different formation/growth rate and volume expansion coefficient should be responsible for this peculiar oxide layer peeling-off behavior around 800Â K. This work can serve as an important reference for the designation of MyFe4âxCoxSb12-based skutterudite thermoelectric device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 612, 5 November 2014, Pages 365-371
Journal: Journal of Alloys and Compounds - Volume 612, 5 November 2014, Pages 365-371
نویسندگان
Pengfei Qiu, Xugui Xia, Xiangyang Huang, Ming Gu, Yuting Qiu, Lidong Chen,