کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1610963 | 1516288 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1âxN/AlN)MQWs/GaN high electron mobility transistor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The high electron mobility transistor (HEMT) structure employing novel InxAl1âxN/AlN multiple-quantum-wells (MQWs) as barrier layer is presented. The two-dimensional electron gas (2DEG) characteristics of (InxAl1âxN/AlN)MQWs/GaN heterojunction have been investigated by solving coupled Schrödinger and Poisson equations self-consistently. The influence of AlN thickness, InxAl1âxN thickness, In content and pair number of (InxAl1âxN/AlN)MQWs on sheet carrier density is investigated. AlN thickness dependence of carriers in barrier layer to total carriers in HEMT and In0.18Al0.82N conduction band diagrams are discussed. The sheet carrier density of (In0.18Al0.82N/AlN)MQWs/GaN heterojunction is larger than that of (AlxGa1âxN/GaN)SLs/GaN heterojunction and achieves to as large as 3.59Â ÃÂ 1013Â cmâ2 with AlN thickness of 1.4Â nm, barrier thickness of 15Â nm and pair number of 5. The calculation shows that (In0.18Al0.82N/AlN)MQWs provide high barrier which confines the 2DEG effectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 605, 25 August 2014, Pages 113-117
Journal: Journal of Alloys and Compounds - Volume 605, 25 August 2014, Pages 113-117
نویسندگان
Wei Li, Xiaoliang Wang, Shenqi Qu, Quan Wang, Hongling Xiao, Cuimei Wang, Enchao Peng, Xun Hou, Zhanguo Wang,