Purge-time-dependent growth of ZnO thin films by atomic layer deposition

• Purge-time-dependent growth behaviors of zinc oxide thin films were investigated.
• Water purge time largely influenced the structural, electrical, and optical properties.
• The partial loss of surface hydroxyl groups was considered to be the main cause of this phenomenon.

The effects of the purge time of diethylzinc and deionized water (H2O) on the structural, electrical, and optical properties of zinc oxide thin films grown by atomic layer deposition were investigated. The exceptionally long purge time of H2O greater than 60 s led to changes in the growth per cycle, electrical conductivity, preferred orientation, and defect state of the grown zinc oxide films, while the purge time of diethylzinc had a negligible effect. These changes were due to the partial loss of surface hydroxyl groups during the long H2O purge step.

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