Transparent bipolar resistive switching memory devices based on Mn doped SnO2 films

In this paper, transparent resistive switching cells using Al/SnO2:Mn/F:SnO2 capacitor were fabricated, which exhibited an optical transmittance of approximately 75% in the visible region (550 nm). We also studied interface modified bulk like space charge limited conduction and observed bipolar resistive switching in the Al/SnO2:Mn/F:SnO2 structure. The results showed that the ON/OFF ratio between high resistance state and low resistance state exceeds 103 at +1 V and −1 V. And the devices also showed a fast reset speeding (100 ns). Due to the creation of a hole in the surrounding oxygen ion, the Mn3+ located at Sn4+ site reduced the electron density, thus increasing the resistance of high resistance state and enlarging memory window of the sample.