G–C3N4/BiVO4 composites with enhanced and stable visible light photocatalytic activity

• G–C3N4/BiVO4 heterojunction were prepared via a mixing method.
• 90 wt% g–C3N4/BVO composite shows superior photocatalysic performance.
• The effective charges separation owns to the formation of binary heterojunction.
• G–C3N4/BVO is a good candidate for photocatalyst under visible-light irradiation.

Graphitic carbon nitride (g–C3N4) and BiVO4 heterostructure was constructed for the preparation of novel photocatalyst with high activities. Compared with the bare g–C3N4 and BiVO4, the g–C3N4/BiVO4 composites show remarkably improved visible-induced photocatalytic activities in degrading RhB for the enhanced transport ability of electrons and holes. The mechanism of the heterostructure semiconductors with high performance was supported by the electrochemical measurements. The recyclability of the 90 wt% g–C3N4/BiVO4 photocatalyst demonstrates the composite shows a high structural stability. The improved photocatalytic activities were attributed to the high adsorption to RhB, the stability of the heterostructure and the energy level match that facilitate the charge separation and transport.