Electrical transport behavior of lead-free 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin film grown on LaNiO3/Si by pulsed laser deposition

The temperature and voltage-polarity dependent leakage current behavior of pulsed laser deposited Ag/0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3/LaNiO3 thin-film capacitor is thoroughly investigated. At fields below 50 kV/cm, the leakage current is Ohmic across both the interfaces. The negative differential resistance behavior is observed in low fields at 300 K. The space charge limited current, with distinct trap-filling and trap-filled regions, dominates positive bias current at medium fields (60-150 kV/cm) and higher temperatures, whereas, the Poole-Frenkel Emission governs the conduction above150 kV/cm. The onset field of Poole-Frenkel Emission decreases with the increasing temperature. Schottky Emission controls the negative bias current at higher fields with 0.43 eV zero field barrier height.