Transport properties of thermoelectric Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 thin films

Transport properties of as-deposited and annealed Bi0.5Sb1.5Te3 (p-type) and Bi2Te2.7Se0.3 (n-type) thin films have been studied. The p-type and n-type thin films were annealed between 150 and 300 °C. Temperature dependence of the transport properties and effect of annealing are described for both types. The role of the crystallization and the defects in relation with the atomic composition are studied for the different annealed thin films.