Characterization of temperature-dependent photoluminescence properties of InAlGaN quaternary alloys

• The properties of the exciton localization energy as well as electron/exciton-phonon interaction are studied by the modified Bose–Einstein equation.
• The stress is studied by the X-ray diffraction spectra to indicate that the c-axis length decreases as the increasing of Al/In ratio.
• The decreased compressive stress attributed to the increased tensile stress formed by Al atoms incorporated.

Samples containing thin InAlGaN layers grown on c-Al2O3 substrates by metalorganic chemical vapor deposition have been studied experimentally and theoretically with the help of photoluminescence measurements between 10 and 300 K. From the analysis of the temperature dependence photoluminescence spectra with the modified Bose–Einstein equation, the localization energy of excitons was estimated successfully and the value is found out to be well correlated to the strength of the electron/exciton-phonon interaction as well as the stress observed in the X-ray diffraction spectra. These results are also confirmed that the c-axis length decreases as the increasing Al/In ratio corresponding to the decreased compressive stress which would be attributed to the increased tensile stress formed by Al atoms incorporated.